Portfolio

GaN

GaNGallium Nitride

One-Stop Foundry Service with Proprietary GaN Technology

DB HiTek offers differentiated competitiveness not only in BCDMOS and analog CMOS-based power processes but also in power GaN (Gallium Nitride) technology. With in-house epitaxial process capabilities, DB HiTek ensures excellent quality and high production stability, providing a one-stop service as a total power solution foundry based on 8-inch wafers.

Process

GaN Power Devices Based on 8-Inch Wafers

650V E-mode GaN HEMT
Wafer Size: 8 inch (in-house epi growth) Technology: (1P/2M + various options) Operation Voltage (V): 650V (>850V Transient) Vth (V): 1~3V (Customized) Dynamic Ron: < 10% (hard & soft switching) Rdson (mΩ·㎠): 3.3mΩ·㎠ (3.0 (2025/E) → 2.5 (2026))

Application-Specific
Solutions

GaN solutions with high efficiency and high power characteristics enable energy savings and system miniaturization across a wide range of applications, including fast chargers, power supply units (PSUs), servers, and telecommunications equipment.

Fast Charger
Power Supply Unit
(PSU)
Server
Telecommunications

Technology Roadmap

  • Development
  • Planning
Table of developed/planned technologies by GaN process by year

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