SJ MOSFET | Portfolio | Technology

SJ MOSFETSuper Junction MOSFET

Customized High-Performance SJ MOSFETs

DB HiTek provides design and manufacturing process services for customized SJ MOSFET (Super Junction MOSFET) with a well-balanced electrical performance profile.

The SJ MOSFET platform enables optimized MOSFET design for high-voltage applications ranging from 500V to 950V, supported by flexible design assistance and proprietary multi-layer epitaxy (EPI) growth technology. This technology also delivers world-class performance characteristics (Rdson × Qg) and a robust quality management system, while supporting features such as low EMI noise, high-speed switching, and FRD (Fast Recovery Diode) options.

The third-generation SJ MOSFET process reduces resistance by 50~60% compared to the second generation, supporting on-resistance values between 25 and 600 milliohms (mΩ) while achieving improved performance and Rsp characteristics. It also offers a range of options, including low electromagnetic interference (EMI), fast switching, fast recovery diodes (FRD), and high electrostatic discharge (ESD) protection, and is compatible with various applications through standard packaging.

DB HiTek is committed to strengthening product competitiveness by continuously developing next-generation SJ MOSFET platforms that add value beyond existing offerings, with the goal of delivering greater value to customers.

Process

The Center of Next-Generation Power Control

SJ MOSFET: Excellent balance in electrical performance (las, switching loss and EMI) Suitable for a wide variety of applications and power ranges Variable integrated Rg Low Qg Poly shrink and Poly Cut Gate architecture Built-in Zener Diode for ESD protection (ESD ≥ 2.0kV)

Application-Specific
Solutions

DB HiTek’s SJ MOSFET is a high-performance power semiconductor suitable for a wide range of high-voltage applications between 500V and 950V. It is designed for easy implementation using standard packaging and ensures stable performance even in extreme environments through high-temperature reliability testing.