Portfolio

SiCSilicon Carbide

SiC Foundry for Sustainable Mobility

DB HiTek aims to become a world-class SiC (Silicon Carbide) foundry partner by leveraging advanced process technologies, expertise in power devices, and a state-of-the-art high-capacity 8-inch manufacturing facility.

DB HiTek offers specialized 1200V SiC MOSFET foundry process services, widely applicable to the eco-friendly automotive sector, covering the entire cycle from development to mass production.
DB HiTek places particular emphasis on securing high-quality SiC raw wafers through reliable supply partners, while pre-establishing design, fab process, and product reliability in-house to help minimize customer development timelines. In addition, dedicated SiC equipment enables customized process support, providing a foundry environment optimized for customer product development.

Process

Smaller. Stronger. Defining a New Era in High-Voltage SiC Foundry

Target is less than 3mW.cm² specific on-resistance (Rsp) Proliferate 30A~100A and expand voltage range; future larger voltage, current Establish process, cell design, and termination PDK Customer to specify layout including die geometry, gate, and bonding pads Trench Development roadmap
SiC FAQ

Key questions regarding the SiC process are available
for your reference.

Application-Specific
Solutions

SiC products are offered in a diverse lineup based on system output power, with a focus on developing modules for high-power systems exceeding 200 kW. For systems under 50 kW, such as onboard chargers (OBC) and light electric vehicles, discrete devices are used to enhance design flexibility and reduce costs. High-power SiC modules are further categorized into compact and high-capacity types based on power density, delivering optimized performance tailored to the characteristics of each system.

EV Inverter
Home Appliance
Commercial PV /
ESS (String Inverter)
Household PV /
ESS (Micro Inverter)
Charging Infra
EV OBC
(On Board Charger)

Technology Roadmap

Table of developed/planned technologies by SiC process by year